Concentration Dependence of Afterglow Suppression in CsI:Tl,Sm

نویسندگان

  • L. A. Kappers
  • R. H. Bartram
  • D. S. Hamilton
  • A. Lempicki
  • C. Brecher
  • V. Gaysinskiy
  • E. E. Ovechkina
  • V. V. Nagarkar
چکیده

Abstract. Combined radioluminescence, afterglow and thermoluminescence experiments on single-crystal samples of co-doped CsI:Tl,Sm suggest that deeper samarium electron traps scavenge electrons from shallower thallium traps and that electrons subsequently released by samarium recombine non-radiatively with holes trapped as VKA(Tl ) centers, thus providing a mechanism for suppression of trapped-charge accumulation in repetitive applications. In the present investigation, experiments performed on two single-crystal samples of CsI:Tl,Sm with nominal concentrations of 0.11% Tl and of 0.2% and 0.05% Sm, respectively, support the inference that electrons tunnel freely between samarium ions and are trapped preferentially near VKA(Tl ) centers where non-radiative recombination is the rate-limiting step.

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Experiments on co-doped CsI:Tl,Sm suggest that samarium electron traps scavenge electrons from thallium traps and that electrons subsequently released by samarium recombine non-radiatively with trapped holes, thus suppressing afterglow. These experiments support the inference that electrons tunnel freely between samarium ions and are trapped preferentially as substitutional Sm near VKA(Tl) cent...

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تاریخ انتشار 2012